Datasheet4U Logo Datasheet4U.com

CHA2110-QDG Datasheet GaAs Monolithic Microwave

Manufacturer: United Monolithic Semiconductors

📥 Download Datasheet

Datasheet Details

Part number CHA2110-QDG
Manufacturer United Monolithic Semiconductors
File Size 671.05 KB
Description GaAs Monolithic Microwave
Datasheet download datasheet CHA2110-QDG Datasheet

General Description

The CHA2110-QDG is a monolithic two-stage wide band, self-biased Low Noise Amplifier.

It is designed for a wide range of applications, from military to commercial communication systems.

The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, and air bridges.

Overview

CHA2110-QDG 7-12 GHz LNA GaAs Monolithic Microwave IC in SMD leadless.

Key Features

  • Broadband performances: 7-12GHz.
  • Linear gain: 19dB.
  • Noise Figure: 1.2dB.
  • Output power @ 1dB comp. : 10dBm.
  • DC bias: Vd=4V @ Id=45mA.
  • 24L-QFN4x4.
  • MSL1 25 20 S21 5.5 5.0 15 4.5 10 4.0 5 3.5 0 3.0 -5 S22 S11 2.5 -10 2.0 -15 1.5 -20 NF 1.0 -25 0.5 -30 0.0 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) Typical gain, input return losses, output return losses and Noise Figure (dB) versus frequency S21, input & output return losses.

More Datasheets from United Monolithic Semiconductors

Part Number Description
CHA2110-98F 7-12GHz LNA
CHA2157 55-60GHz Low Noise / Medium Power Amplifier
CHA2157-99F Medium Power Amplifier
CHA2159 55-65GHz Low Noise / Medium Power Amplifier
CHA2159-99F Low Noise / Medium Power Amplifier
CHA2190 20-30GHz Low Noise Amplifier
CHA2190-99F Low Noise Amplifier
CHA2192 24-26.5GHz Low Noise Amplifier
CHA2193 20-30GHz Low Noise Amplifier
CHA2193-99F 20-30GHz Low Noise Amplifier